Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
- Авторы: Shiryaev A.1, Vorotyntsev V.2, Shobolov E.1
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Учреждения:
- Research and Development Center, Sedakov Measuring Systems Research Institute
- Alekseev Nizhny Novgorod State Technical University
- Выпуск: Том 52, № 9 (2018)
- Страницы: 1114-1117
- Раздел: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203974
- DOI: https://doi.org/10.1134/S1063782618090166
- ID: 203974
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Аннотация
It is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole–Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole–Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 × 109 cm–3 at 400 K and a field strength of 10 MV/cm is found. It is concluded that the Poole–Frenkel effect can be applied not for prediction of the absolute value of the radiation-induced charge but for comparison of the samples in terms of the ability to accumulate it.
Об авторах
A. Shiryaev
Research and Development Center, Sedakov Measuring Systems Research Institute
Автор, ответственный за переписку.
Email: alsh92@rambler.ru
Россия, Nizhny Novgorod, 603137
V. Vorotyntsev
Alekseev Nizhny Novgorod State Technical University
Email: alsh92@rambler.ru
Россия, Nizhny Novgorod, 603950
E. Shobolov
Research and Development Center, Sedakov Measuring Systems Research Institute
Email: alsh92@rambler.ru
Россия, Nizhny Novgorod, 603137