Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)
- Авторы: Solov’ev V.1, Chernov M.1, Sitnikova A.1, Brunkov P.1, Meltser B.1, Ivanov S.1
-
Учреждения:
- Ioffe Institute
- Выпуск: Том 52, № 1 (2018)
- Страницы: 120-125
- Раздел: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202318
- DOI: https://doi.org/10.1134/S1063782618010232
- ID: 202318
Цитировать
Аннотация
The results of optimization of the design and growth conditions of an InxAl1–xAs metamorphic buffer layer with a high In content (x = 0.05–0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties and lowering the surface density of threading dislocations. The lowest surface-pattern roughness RMS = 2.3 nm (on an area of 10 × 10 μm) and density of threading dislocations of 5 × 107 cm–2 are found in the samples with a convex-graded metamorphic buffer layer.
Об авторах
V. Solov’ev
Ioffe Institute
Автор, ответственный за переписку.
Email: vasol@beam.ioffe.ru
Россия, St. Petersburg, 194021
M. Chernov
Ioffe Institute
Email: vasol@beam.ioffe.ru
Россия, St. Petersburg, 194021
A. Sitnikova
Ioffe Institute
Email: vasol@beam.ioffe.ru
Россия, St. Petersburg, 194021
P. Brunkov
Ioffe Institute
Email: vasol@beam.ioffe.ru
Россия, St. Petersburg, 194021
B. Meltser
Ioffe Institute
Email: vasol@beam.ioffe.ru
Россия, St. Petersburg, 194021
S. Ivanov
Ioffe Institute
Email: vasol@beam.ioffe.ru
Россия, St. Petersburg, 194021