Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)
- Authors: Solov’ev V.A.1, Chernov M.Y.1, Sitnikova A.A.1, Brunkov P.N.1, Meltser B.Y.1, Ivanov S.V.1
-
Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 1 (2018)
- Pages: 120-125
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202318
- DOI: https://doi.org/10.1134/S1063782618010232
- ID: 202318
Cite item
Abstract
The results of optimization of the design and growth conditions of an InxAl1–xAs metamorphic buffer layer with a high In content (x = 0.05–0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties and lowering the surface density of threading dislocations. The lowest surface-pattern roughness RMS = 2.3 nm (on an area of 10 × 10 μm) and density of threading dislocations of 5 × 107 cm–2 are found in the samples with a convex-graded metamorphic buffer layer.
About the authors
V. A. Solov’ev
Ioffe Institute
Author for correspondence.
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. Yu. Chernov
Ioffe Institute
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Sitnikova
Ioffe Institute
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. N. Brunkov
Ioffe Institute
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. Ya. Meltser
Ioffe Institute
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Ivanov
Ioffe Institute
Email: vasol@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021