On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate
- Авторы: Zubov F.1, Semenova E.2, Kulkova I.2, Yvind K.2, Kryzhanovskaya N.1, Maximov M.1, Zhukov A.1
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Учреждения:
- Russian Academy of Sciences
- DTU Fotonik, Department of Photonics Engineering
- Выпуск: Том 51, № 10 (2017)
- Страницы: 1332-1336
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/201367
- DOI: https://doi.org/10.1134/S1063782617100207
- ID: 201367
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Аннотация
We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer. A high characteristic temperature of the threshold current, T0 = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T0 and the band-gap width of the waveguide layers is found.
Об авторах
F. Zubov
Russian Academy of Sciences
Автор, ответственный за переписку.
Email: fedyazu@mail.ru
Россия, St. Petersburg, 194021
E. Semenova
DTU Fotonik, Department of Photonics Engineering
Email: fedyazu@mail.ru
Дания, Kgs. Lyngby, DK-2800
I. Kulkova
DTU Fotonik, Department of Photonics Engineering
Email: fedyazu@mail.ru
Дания, Kgs. Lyngby, DK-2800
K. Yvind
DTU Fotonik, Department of Photonics Engineering
Email: fedyazu@mail.ru
Дания, Kgs. Lyngby, DK-2800
N. Kryzhanovskaya
Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg, 194021
M. Maximov
Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg, 194021
A. Zhukov
Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg, 194021