Magnetospectroscopy of double HgTe/CdHgTe quantum wells
- Авторы: Bovkun L.1, Krishtopenko S.1,2, Ikonnikov A.1,3, Aleshkin V.1,3, Kadykov A.1,2, Ruffenach S.2, Consejo C.2, Teppe F.2, Knap W.2, Orlita M.4, Piot B.4, Potemski M.4, Mikhailov N.5,6, Dvoretskii S.5, Gavrilenko V.1,3
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Учреждения:
- Institute for Physics of Microstructures
- Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
- Lobachevsky Nizhny Novgorod State University
- Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Выпуск: Том 50, № 11 (2016)
- Страницы: 1532-1538
- Раздел: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198606
- DOI: https://doi.org/10.1134/S1063782616110063
- ID: 198606
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Аннотация
The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in symmetric QWs with a rectangular potential profile are calculated based on the Kane 8 × 8 model. The presence of a tunnel-transparent barrier is shown to lead to the splitting of states and “doubling” of the main magnetoabsorption lines. At a QW width close to the critical one the presence of band inversion and the emergence of a gapless band structure, similar to bilayer graphene, are shown for a structure with a single QW. The shift of magnetoabsorption lines as the carrier concentration changes due to the persistent photoconductivity effect associated with a change in the potential profile because of trap charge exchange is detected. This opens up the possibility for controlling topological phase transitions in such structures.
Об авторах
L. Bovkun
Institute for Physics of Microstructures
Email: antikon@ipmras.ru
Россия, Nizhny Novgorod, 603950
S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Россия, Nizhny Novgorod, 603950; Montpellier, 34095
A. Ikonnikov
Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University
Автор, ответственный за переписку.
Email: antikon@ipmras.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Aleshkin
Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University
Email: antikon@ipmras.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Россия, Nizhny Novgorod, 603950; Montpellier, 34095
S. Ruffenach
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
C. Consejo
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
F. Teppe
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
W. Knap
Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Франция, Montpellier, 34095
M. Orlita
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA
Email: antikon@ipmras.ru
Франция, Grenoble, FR-38042
B. Piot
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA
Email: antikon@ipmras.ru
Франция, Grenoble, FR-38042
M. Potemski
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G), CNRS-UJF-UPS-INSA
Email: antikon@ipmras.ru
Франция, Grenoble, FR-38042
N. Mikhailov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: antikon@ipmras.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
S. Dvoretskii
Rzhanov Institute of Semiconductor Physics
Email: antikon@ipmras.ru
Россия, Novosibirsk, 630090
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky Nizhny Novgorod State University
Email: antikon@ipmras.ru
Россия, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950