effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
- Авторы: Tsatsulnikov A.1,2, Lundin V.2, Zavarin E.2, Yagovkina M.2, Sakharov A.2, Usov S.1,3, Zemlyakov V.4, Egorkin V.4, Bulashevich K.5, Karpov S.5, Ustinov V.1
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Учреждения:
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Ioffe Physical–Technical Institute
- Saint-Petersburg State University of Information Technologies, Mechanics and Optics
- National Research University of Electronic Technology (MIET)
- “Soft-Impact” Ltd.
- Выпуск: Том 50, № 10 (2016)
- Страницы: 1383-1389
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198123
- DOI: https://doi.org/10.1134/S1063782616100237
- ID: 198123
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Аннотация
The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.
Об авторах
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Lundin
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021
M. Yagovkina
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Sakharov
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Usov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Saint-Petersburg State University of Information Technologies, Mechanics and Optics
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Sablinskaya 14, St. Petersburg, 197101
V. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: andrew@beam.ioffe.ru
Россия, 4806 proezd 5, Zelenograd, Moscow oblast, 124498
V. Egorkin
National Research University of Electronic Technology (MIET)
Email: andrew@beam.ioffe.ru
Россия, 4806 proezd 5, Zelenograd, Moscow oblast, 124498
K. Bulashevich
“Soft-Impact” Ltd.
Email: andrew@beam.ioffe.ru
Россия, ul. Engelsa 27, korp. 12v, St. Petersburg, 194156
S. Karpov
“Soft-Impact” Ltd.
Email: andrew@beam.ioffe.ru
Россия, ul. Engelsa 27, korp. 12v, St. Petersburg, 194156
V. Ustinov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: andrew@beam.ioffe.ru
Россия, ul. Politekhnicheskaya 26, St. Petersburg, 194021