UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities
- Авторы: Mezdrogina M.1, Vinogradov A.1, Kuzmin R.1, Levitski V.1,2, Kozanova Y.3, Lyanguzov N.3,4, Chukichev M.3,5
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Учреждения:
- Ioffe Physical–Technical Institute
- St. Petersburg State Electrotechnical University “LETI”
- St. Petersburg Polytechnic University
- Southern Federal University
- Faculty of Physics
- Выпуск: Том 50, № 10 (2016)
- Страницы: 1304-1311
- Раздел: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/198022
- DOI: https://doi.org/10.1134/S106378261610016X
- ID: 198022
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Аннотация
For ZnO films, nanorods, and bulk single crystals doped with Er+ ions, it is shown that the effect of codopants introduced into the cation and ion sublattices and the observation of a high-intensity emission band at the wavelength λmax = 1535 nm are defined by the local environment of the Er+ ion. Doping of the films and single crystals with Er+ ions by diffusion brings about an infrared (IR) emission band with a low intensity because of an inadequate concentration of impurity ions. The emission intensity of this band can be raised by introducing additional Ag, Au, or N+ impurities into the ZnO films. The UV-emission intensity of the Er-doped films and single crystals at λmax = 368–372 nm is identical to that of the undoped films. ZnO nanorods doped with Er only or together with Al or Ga codopants exhibit only one IR band (at λmax = 1535 nm), whose intensity decreases upon the introduction of codopants. Doping of the nanorods with the N+ gaseous impurity during growth (930 < T < 960°C) and then with the Er+ impurity by diffusion does not yield a substantial increase in the IR-emission intensity compared to the that of the corresponding band for nanorods not doped with the N+ impurity. In the Er-doped nanorods, whose photoluminescence spectra exhibit a high-intensity band at λmax = 1535 nm, the UV emission band at λmax = 372 nm is practically lacking.
Об авторах
M. Mezdrogina
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Vinogradov
Ioffe Physical–Technical Institute
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 194021
R. Kuzmin
Ioffe Physical–Technical Institute
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Levitski
Ioffe Physical–Technical Institute; St. Petersburg State Electrotechnical University “LETI”
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197376
Yu. Kozanova
St. Petersburg Polytechnic University
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 195251
N. Lyanguzov
St. Petersburg Polytechnic University; Southern Federal University
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 195251; Rostov-on-Don, 344006
M. Chukichev
St. Petersburg Polytechnic University; Faculty of Physics
Email: Margaret.m@mail.ioffe.ru
Россия, St. Petersburg, 195251; Moscow, 119991