Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure
- Авторы: Vexler M.1, Grekhov I.1
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Учреждения:
- Ioffe Physical–Technical Institute
- Выпуск: Том 50, № 5 (2016)
- Страницы: 671-677
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197144
- DOI: https://doi.org/10.1134/S1063782616050249
- ID: 197144
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Аннотация
The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO2(ZrO2)/SiO2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO2(ZrO2)/SiO2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.
Об авторах
M. Vexler
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: shulekin@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Grekhov
Ioffe Physical–Technical Institute
Email: shulekin@mail.ioffe.ru
Россия, St. Petersburg, 194021