Informaçao sobre o Autor
Evstigneev, V.
Edição | Seção | Título | Arquivo |
Volume 52, Nº 6 (2018) | Electronic Properties of Semiconductors | Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |