Автор туралы ақпарат
Evstigneev, V.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 52, № 6 (2018) | Electronic Properties of Semiconductors | Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |