Informaçao sobre o Autor
Bannaya, V.
Edição | Seção | Título | Arquivo |
Volume 51, Nº 3 (2017) | Electronic Properties of Semiconductors | Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength | |
Volume 52, Nº 3 (2018) | Electronic Properties of Semiconductors | Electrical Breakdown in Pure n- and p-Si | |
Volume 53, Nº 1 (2019) | Electronic Properties of Semiconductors | Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |