Informaçao sobre o Autor
Reshanov, S. A.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 1 (2016) | Physics of Semiconductor Devices | Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide | |
Volume 50, Nº 6 (2016) | Physics of Semiconductor Devices | Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |