On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond
- Autores: Bekin N.1
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Afiliações:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Edição: Volume 53, Nº 10 (2019)
- Páginas: 1340-1347
- Seção: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207182
- DOI: https://doi.org/10.1134/S1063782619100051
- ID: 207182
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Resumo
The relaxation of holes from excited states of boron acceptors in diamond with the emission of two optical phonons is studied theoretically. To describe the wave function of acceptor states, an electron-like Hamiltonian with an isotropic effective mass is used. The wave function of the ground state is determined by the quantum-defect method. The probability of the transition is calculated in the adiabatic approximation. It is assumed that the phonon dispersion law is isotropic and the phonon frequency is quadratically dependent on the wave-vector modulus, with the maximum and minimum frequencies ωmax and ωmin at the center and boundary of the Brillouin zone, respectively. A high sensitivity of the probability of the transition to the characteristic of phonon dispersion ωmax – ωmin is revealed, especially for the transition with the energy ET in the range 2ℏωmin ≤ ET < ℏωmin + ℏωmax. Depending on the energy of the transition and on the phonon dispersion, the two-phonon relaxation rate at the low-temperature limit varies from extremely small values (<108 s–1) near the threshold ET = 2ℏωmin to extremely large values (>1012 s–1) in the “resonance” range ℏωmin + ℏωmax ≤ ET ≤ 2ℏωmax.
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Sobre autores
N. Bekin
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: nbekin@ipmras.ru
Rússia, Nizhny Novgorod, 603950