Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals
- Autores: Smagina Z.1, Zinovyev V.1, Rodyakina E.1,2, Fomin B.1, Stepikhova M.3, Yablonskiy A.3, Gusev S.3, Novikov A.3, Dvurechenskii A.1,2
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Afiliações:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Edição: Volume 53, Nº 10 (2019)
- Páginas: 1329-1333
- Seção: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207171
- DOI: https://doi.org/10.1134/S1063782619100191
- ID: 207171
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Resumo
Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a substrate followed by the formation of a photonic crystal on this array. In the other approach, the photonic crystal itself serves as a template for the ordered growth of quantum dots. It is shown that, by varying the diameter of holes of photonic crystals in the second approach, it is possible to implement the growth of quantum dots in two modes, in which quantum dots are formed inside or outside the holes of the photonic crystal. For structures with ordered quantum dots incorporated into a photonic crystal, an increase in the photoluminescence signal intensity is detected at room temperature in the spectral range 0.9–1.2 eV. This increase is attributed to the interaction of emission from the structure with radiation modes of the photonic crystal.
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Sobre autores
Zn. Smagina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: smagina@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Zinovyev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Rússia, Novosibirsk, 630090
E. Rodyakina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
B. Fomin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Rússia, Novosibirsk, 630090
M. Stepikhova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Rússia, Nizhny Novgorod, 603950
A. Yablonskiy
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Rússia, Nizhny Novgorod, 603950
S. Gusev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Rússia, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Rússia, Nizhny Novgorod, 603950
A. Dvurechenskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090