Enviar artigo por via de e-mail Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
- Autores: Yurasov D.1, Baidakova N.1, Verbus V.1,2, Gusev N.1, Mashin A.3, Morozova E.1, Nezhdanov A.3, Novikov A.1,3, Skorohodov E.1, Shengurov D.1, Yablonskiy A.1
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Afiliações:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- National Research University Higher School of Economics
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 53, Nº 10 (2019)
- Páginas: 1324-1328
- Seção: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207163
- DOI: https://doi.org/10.1134/S1063782619100257
- ID: 207163
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Resumo
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so as to provide the mechanical contact of a part of the suspended microstructure with lower-lying layers. To implement this scheme, SOI substrates with a thin upper Si layer 100 nm in thickness are used. It is shown using the measurements of Raman spectra depending on the pumping power that local heating in such structures decreases. Measurements of the microphotoluminescence spectra show a considerable increase in the signal intensity from strained regions of Ge microstructures as well as the possibility of increasing the maximal optical pumping power (not leading to irreversible changes) for microstructures, in which the mechanical contact of the strained part with lower-lying layers is provided, when compared with suspended structures.
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Sobre autores
D. Yurasov
Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
N. Baidakova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
V. Verbus
Institute for Physics of Microstructures, Russian Academy of Sciences; National Research University Higher School of Economics
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603155
N. Gusev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
A. Mashin
Lobachevsky State University of Nizhny Novgorod
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603950
E. Morozova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
A. Nezhdanov
Lobachevsky State University of Nizhny Novgorod
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
E. Skorohodov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
D. Shengurov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
A. Yablonskiy
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: Inquisitor@ipmras.ru
Rússia, Nizhny Novgorod, 603087
