Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures


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Resumo

The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.

Sobre autores

M. Lunina

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006

L. Lunin

Federal Research Center Southern Scientific Center, Russian Academy of Sciences; Platov South-Russian State Polytechnic University (SRSTU (NPI))

Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006; Novocherkassk, 346400

D. Alfimova

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006

A. Pashchenko

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006

E. Danilina

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006

V. Nefedov

Platov South-Russian State Polytechnic University (SRSTU (NPI))

Email: lunin_ls@mail.ru
Rússia, Novocherkassk, 346400


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