Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.

About the authors

M. L. Lunina

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

L. S. Lunin

Federal Research Center Southern Scientific Center, Russian Academy of Sciences; Platov South-Russian State Polytechnic University (SRSTU (NPI))

Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, 346400

D. L. Alfimova

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

A. S. Pashchenko

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

E. M. Danilina

Federal Research Center Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006

V. V. Nefedov

Platov South-Russian State Polytechnic University (SRSTU (NPI))

Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, 346400


Copyright (c) 2019 Pleiades Publishing, Ltd.

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies