Properties of Semipolar GaN Grown on a Si(100) Substrate
- Autores: Bessolov V.1, Konenkova E.1, Orlova T.1, Rodin S.1, Seredova N.1, Solomnikova A.2, Shcheglov M.1, Kibalov D.3, Smirnov V.3
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Afiliações:
- Ioffe Institute
- St. Petersburg Electrotechnical University LETI
- Quantum Silicon OOO
- Edição: Volume 53, Nº 7 (2019)
- Páginas: 989-992
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/206555
- DOI: https://doi.org/10.1134/S1063782619070054
- ID: 206555
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Resumo
Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10\(\bar {1}\)2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10\(\bar {1}\)1) layers with a full-width at half-maximum of the diffraction-curve of ωθ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSFS-I1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.
Sobre autores
V. Bessolov
Ioffe Institute
Autor responsável pela correspondência
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 194021
E. Konenkova
Ioffe Institute
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 194021
T. Orlova
Ioffe Institute
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Rodin
Ioffe Institute
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Seredova
Ioffe Institute
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Solomnikova
St. Petersburg Electrotechnical University LETI
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 197022
M. Shcheglov
Ioffe Institute
Email: bes.triat@mail.ioffe.ru
Rússia, St. Petersburg, 194021
D. Kibalov
Quantum Silicon OOO
Email: bes.triat@mail.ioffe.ru
Rússia, Moscow, 105005
V. Smirnov
Quantum Silicon OOO
Email: bes.triat@mail.ioffe.ru
Rússia, Moscow, 105005