Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV
- Autores: Privezentsev V.1, Kulikauskas V.2, Skuratov V.3, Zilova O.4, Burmistrov A.4, Presnyakov M.5, Goryachev A.6
-
Afiliações:
- Institute of Physics and Technology, Russian Academy of Sciences
- Skobeltsyn Institute of Nuclear Physics, Moscow State University
- Joint Institute for Nuclear Research
- National Research University MEI
- National Research Center Kurchatov Institute
- CNL Devices Ltd.
- Edição: Volume 53, Nº 3 (2019)
- Páginas: 313-320
- Seção: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205830
- DOI: https://doi.org/10.1134/S1063782619030163
- ID: 205830
Citar
Resumo
Single-crystal n-Si(100) wafers are implanted with 64Zn+ ions with an energy of 50 keV and dose of 5 × 1016 cm–2. Then the samples are irradiated with 132Xe26+ ions with an energy of 167 MeV in the range of fluences from 1 × 1012 to 5 × 1014 cm–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 1014 cm–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.
Sobre autores
V. Privezentsev
Institute of Physics and Technology, Russian Academy of Sciences
Autor responsável pela correspondência
Email: privezentsev@ftian.ru
Rússia, Moscow, 117218
V. Kulikauskas
Skobeltsyn Institute of Nuclear Physics, Moscow State University
Email: privezentsev@ftian.ru
Rússia, Moscow, 119991
V. Skuratov
Joint Institute for Nuclear Research
Email: privezentsev@ftian.ru
Rússia, Dubna, Moscow region, 141520
O. Zilova
National Research University MEI
Email: privezentsev@ftian.ru
Rússia, Moscow, 111250
A. Burmistrov
National Research University MEI
Email: privezentsev@ftian.ru
Rússia, Moscow, 111250
M. Presnyakov
National Research Center Kurchatov Institute
Email: privezentsev@ftian.ru
Rússia, Moscow, 123182
A. Goryachev
CNL Devices Ltd.
Email: privezentsev@ftian.ru
Rússia, ZelenogradMoscow, 124432