Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves
- Autores: Viglin N.1, Gribov I.1, Tsvelikhovskaya V.1, Patrakov E.1
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Afiliações:
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- Edição: Volume 53, Nº 2 (2019)
- Páginas: 264-267
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205783
- DOI: https://doi.org/10.1134/S1063782619020258
- ID: 205783
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Resumo
The formation conditions of a smooth and oxide-free surface of InSb semiconductor with the purpose of fabricating lateral spin devices based on it are investigated. The dry etching rate by Ar ions of the surface of the crystalline faces (100) of InSb plates as well as a variation in their roughness depending on the power supplied to ion etching devices are investigated. The degree of oxidation of the semiconductor surface exposed to air after ion cleaning and annealing in molecular hydrogen are evaluated. Based on comparison of the efficiency of spin injection in devices formed with semiconductors subjected to various types of treatment, a conclusion is made about the parameters of optimal preparation of the surface of the InSb wafers for the fabrication of lateral spin devices.
Sobre autores
N. Viglin
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: viglin@imp.uran.ru
Rússia, Yekaterinburg, 620990
I. Gribov
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: viglin@imp.uran.ru
Rússia, Yekaterinburg, 620990
V. Tsvelikhovskaya
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: viglin@imp.uran.ru
Rússia, Yekaterinburg, 620990
E. Patrakov
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: viglin@imp.uran.ru
Rússia, Yekaterinburg, 620990