A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers
- Autores: Zubov F.1, Muretova M.1, Asryan L.2, Semenova E.3, Maximov M.1, Korenev V.1, Savelyev A.1, Zhukov A.1
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Afiliações:
- St. Petersburg National Research Academic University of the Russian Academy of Sciences
- Virginia Polytechnic Institute and State University
- DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark
- Edição: Volume 52, Nº 14 (2018)
- Páginas: 1905-1908
- Seção: Lasers and Optoelectronic Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205159
- DOI: https://doi.org/10.1134/S1063782618140336
- ID: 205159
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Resumo
A search for materials suitable for implementation of 1.55 µm Al-free diode lasers based on InP with asymmetric barrier (AB) layers is conducted. It is shown that a very high (over 106) suppression ratio of the parasitic electron flux can be achieved using common III–V alloys for the ABs. Hence placing such ABs in the immediate vicinity of the active region should completely suppress the parasitic recombination in the waveguide. Several optimal AB designs are proposed that are based on one of the following alloys: Al-free GaInPSb, ternary AlInAs, or quaternary AlGaInAs with a low Al-content. As an important and beneficial byproduct of utilization of such ABs, an improvement of majority carrier capture into the active region occurs.
Sobre autores
F. Zubov
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Autor responsável pela correspondência
Email: fedyazu@mail.ru
Rússia, St. Petersburg
M. Muretova
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Rússia, St. Petersburg
L. Asryan
Virginia Polytechnic Institute and State University
Email: fedyazu@mail.ru
Estados Unidos da América, Blacksburg, Virginia
E. Semenova
DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark
Email: fedyazu@mail.ru
Dinamarca, Kongens Lyngby
M. Maximov
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Rússia, St. Petersburg
V. Korenev
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Rússia, St. Petersburg
A. Savelyev
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Rússia, St. Petersburg
A. Zhukov
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Rússia, St. Petersburg