Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers
- Autores: Asryan L.1, Zubov F.2, BalezinaPolubavkina Y.2, Moiseev E.2, Muretova M.2, Kryzhanovskaya N.2, Maximov M.2, Zhukov A.2
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Afiliações:
- Virginia Polytechnic Institute and State University
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Edição: Volume 52, Nº 12 (2018)
- Páginas: 1621-1629
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204817
- DOI: https://doi.org/10.1134/S1063782618120059
- ID: 204817
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Resumo
A self-consistent model for calculating the threshold and high-power characteristics of semiconductor quantum well lasers with asymmetric barrier layers is developed. The model, which is based on a system of rate equations, uses the universal condition of global charge neutrality in the laser structure. The electron and hole concentrations in the waveguide region and in the quantum well (QW) and the concentration of photons of stimulated emission are calculated. The local neutrality in the QW is shown to be strongly violated, especially at high injection currents. The violation of neutrality in a QW makes the electron and hole concentrations there dependent on the injection current under lasing conditions: in the structures under consideration, the electron concentration in the QW decreases while the hole concentration increases with increasing injection current. In the case of the ideal functioning of asymmetric barrier layers, when electron–hole recombination in the waveguide region is completely suppressed, the violation of neutrality in the QW has almost no effect on the dependence of the output optical power on the injection current: the quantum efficiency is close to unity and the light–current characteristic is linear. Nevertheless, the violation of neutrality in the QW causes weakening of the temperature dependence of the threshold current and, hence, an increase in the characteristic temperature T0 of the laser.
Sobre autores
L. Asryan
Virginia Polytechnic Institute and State University
Autor responsável pela correspondência
Email: asryan@vt.edu
Estados Unidos da América, Virginia, Blacksburg, 24061
F. Zubov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021
Yu. BalezinaPolubavkina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021
E. Moiseev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021
M. Muretova
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021
N. Kryzhanovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021
M. Maximov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021
A. Zhukov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: asryan@vt.edu
Rússia, St. Petersburg, 194021