Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures
- Autores: Orlov M.1,2, Volkova N.3, Ivina N.1, Orlov L.2,4
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Afiliações:
- Nizhny Novgorod Institute of Management, Russian Presidential Academy of National Economy and Public Administration
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Nizhny Novgorod State Lobachevsky University
- Nizhny Novgorod State Alekseev Technical University
- Edição: Volume 52, Nº 9 (2018)
- Páginas: 1129-1136
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203992
- DOI: https://doi.org/10.1134/S1063782618090129
- ID: 203992
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Resumo
The electric-field behavior of resonance features of the photoelectric characteristics of InAs/GaAs heterostructures is investigated. The emission of carriers excited by light from InAs quantum dots into the GaAs matrix is discussed. It is shown that at the temperature of liquid nitrogen the photocurrent in a strong transverse electric field is only determined by the effect of electron tunneling through a barrier formed at the quantum-dot interfaces. Comparison of the experimental curves with the results obtained using a quasiclassical expression for the tunneling-current component and subsequent analysis of the potential structure made it possible to refine the parameters of the heterostructure under study. The contribution of the resonance component caused by possible electron tunneling through the barrier with the participation of the local defect states to the total tunneling current is analyzed. The influence of the level of excitation of the system on the photocurrent flowing through the InAs/GaAs heterojunction is theoretically studied.
Sobre autores
M. Orlov
Nizhny Novgorod Institute of Management, Russian Presidential Academy of National Economy and Public Administration; Institute for Physics of Microstructures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: orlov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Volkova
Nizhny Novgorod State Lobachevsky University
Email: orlov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
N. Ivina
Nizhny Novgorod Institute of Management, Russian Presidential Academy of National Economy and Public Administration
Email: orlov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950
L. Orlov
Institute for Physics of Microstructures, Russian Academy of Sciences; Nizhny Novgorod State Alekseev Technical University
Email: orlov@ipm.sci-nnov.ru
Rússia, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950