In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties
- Autores: Salii R.1, Kosarev I.2, Mintairov S.1, Nadtochiy A.1,2, Shvarts M.1, Kalyuzhnyy N.1
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Afiliações:
- Ioffe Institute
- St. Petersburg National Research Academic University
- Edição: Volume 52, Nº 7 (2018)
- Páginas: 870-876
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203644
- DOI: https://doi.org/10.1134/S1063782618070199
- ID: 203644
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Resumo
The growth peculiarities of In0.8Ga0.2As quantum dots and their arrays on GaAs surface by metalorganic vapor-phase epitaxy are investigated. The bimodal size distribution of In0.8Ga0.2As quantum dots is established from the photoluminescence spectra recorded at different temperatures. The growth parameters were determined at which the stacking of 20 In0.8Ga0.2As quantum-dot layers in the active area of a GaAs solar cell makes it possible to enhance the photogenerated current by 0.97 and 0.77 mA/cm2 for space and terrestrial solar spectra, respectively, with the high quality of the p–n junction retained. The photogenerated current in a solar cell with quantum dots is higher than in the reference GaAs structure by ~1% with regard to nonradiative-recombination loss originating from stresses induced by the quantum-dot array.
Sobre autores
R. Salii
Ioffe Institute
Autor responsável pela correspondência
Email: r.saliy@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Kosarev
St. Petersburg National Research Academic University
Email: r.saliy@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Mintairov
Ioffe Institute
Email: r.saliy@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Nadtochiy
Ioffe Institute; St. Petersburg National Research Academic University
Email: r.saliy@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
M. Shvarts
Ioffe Institute
Email: r.saliy@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Institute
Email: r.saliy@mail.ioffe.ru
Rússia, St. Petersburg, 194021