Enviar artigo por via de e-mail Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon
- Autores: Parkhomenko H.1, Solovan M.1, Maryanchuk P.1
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Afiliações:
- Yuriy Fedkovych Chernivtsi National University
- Edição: Volume 52, Nº 7 (2018)
- Páginas: 859-863
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203628
- DOI: https://doi.org/10.1134/S1063782618070163
- ID: 203628
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Resumo
Silicon nanowires are formed on n-Si substrates by chemical etching. p-NiO/n-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype p-NiO/n-Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the p-NiO/n-Si heterojunction under forward and reverse biases are established.
Sobre autores
H. Parkhomenko
Yuriy Fedkovych Chernivtsi National University
Autor responsável pela correspondência
Email: h.parkhomenko@chnu.edu.ua
Ucrânia, Chernivtsi, 58012
M. Solovan
Yuriy Fedkovych Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ucrânia, Chernivtsi, 58012
P. Maryanchuk
Yuriy Fedkovych Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ucrânia, Chernivtsi, 58012
