Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
- Autores: Evstigneev V.1,2, Varavin V.3, Chilyasov A.1, Remesnik V.3, Moiseev A.1,2, Stepanov B.1
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Afiliações:
- Devyatykh Institute of Chemistry of High-Purity Substances
- Lobachevsky State University of Nizhny Novgorod
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 52, Nº 6 (2018)
- Páginas: 702-707
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203446
- DOI: https://doi.org/10.1134/S1063782618060052
- ID: 203446
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Resumo
The temperature dependences of the charge-carrier concentration and lifetime of minority carriers in undoped and arsenic-doped p-type Hg1 – xCdxTe epitaxial layers with x ≈ 0.4 grown by the MOCVD-IMP (metalorganic chemical vapor deposition–interdiffusion multilayer process) method are studied. It is shown that the temperature dependences of the charge-carrier concentration can be described by a model assuming the presence of one acceptor and one donor level. The ionization energies of acceptors in the undoped and arsenic-doped materials are 14 and 3.6 meV, respectively. It is established that the dominant recombination mechanism in the undoped layers is Shockley–Read–Hall recombination, and after low-temperature equilibrium annealing in mercury vapors (230°C, 24 h), the dominant mechanism is radiative recombination. The fundamental limitation of the lifetime in the arsenic-doped material is caused by the Auger-7 process. Activation annealing (360°C, 2 h) of the doped layers makes it possible to attain the 100% activation of arsenic.
Sobre autores
V. Evstigneev
Devyatykh Institute of Chemistry of High-Purity Substances; Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: evstigneev@ihps.nnov.ru
Rússia, Nizhny Novgorod, 603951; Nizhny Novgorod, 603950
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: evstigneev@ihps.nnov.ru
Rússia, Novosibirsk, 630090
A. Chilyasov
Devyatykh Institute of Chemistry of High-Purity Substances
Email: evstigneev@ihps.nnov.ru
Rússia, Nizhny Novgorod, 603951
V. Remesnik
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: evstigneev@ihps.nnov.ru
Rússia, Novosibirsk, 630090
A. Moiseev
Devyatykh Institute of Chemistry of High-Purity Substances; Lobachevsky State University of Nizhny Novgorod
Email: evstigneev@ihps.nnov.ru
Rússia, Nizhny Novgorod, 603951; Nizhny Novgorod, 603950
B. Stepanov
Devyatykh Institute of Chemistry of High-Purity Substances
Email: evstigneev@ihps.nnov.ru
Rússia, Nizhny Novgorod, 603951