Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System
- Autores: Borshch N.1, Kurganskii S.2
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Afiliações:
- Voronezh State Technical University
- Voronezh State University
- Edição: Volume 52, Nº 3 (2018)
- Páginas: 282-286
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202526
- DOI: https://doi.org/10.1134/S1063782618030089
- ID: 202526
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Resumo
The results of calculations of the electronic structure of four-component crystals based on silicon and germanium are reported. The calculations are performed by the method of linearized augmented plane waves. Analysis of the results of calculation makes it possible to determine the dependence of the crystals’ properties on the relation between the numbers of silicon and germanium atoms in the elementary cell and also on the positions of substituting zinc atoms.
Sobre autores
N. Borshch
Voronezh State Technical University
Autor responsável pela correspondência
Email: n.a.borshch@ya.ru
Rússia, Voronezh, 394026
S. Kurganskii
Voronezh State University
Email: n.a.borshch@ya.ru
Rússia, Voronezh, 394036