On the delta-type doping of GaAs-based heterostructures with manganese compounds
- Autores: Moiseev K.1, Nevedomsky V.1, Kudriavtsev Y.2, Escobosa-Echavarria A.2, Lopez-Lopez M.3
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Afiliações:
- Ioffe Institute
- Dep. Ingenieria Eléctrica-SEES
- Dep. Fisica
- Edição: Volume 51, Nº 9 (2017)
- Páginas: 1141-1147
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/201116
- DOI: https://doi.org/10.1134/S1063782617090159
- ID: 201116
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Resumo
Heterostructures, which incorporate GaAs/InGaAs/GaAs quantum wells and are doped with spatially remote monatomic Mn layers, are formed on GaAs(001) substrate under conditions of multilayer buildup by the method of molecular-beam epitaxy. Combined studies of the obtained samples were performed by the method of secondary-ion mass spectrometry, by measurements of X-ray diffraction, and using a transmission electron microscope. The heterostructures under study with a doping impurity concentration amounting to 0.5 single layers are elastically stressed and demonstrate planar clearly defined interfaces without visible extended or point defects. A method for visualization of the distribution of the manganese concentration in the three-dimensional GaAs matrix in the vicinity of a quantum well is suggested. According to experimental results, there is a probability for manganese diffusion into the GaAs/InGaAs/GaAs quantum well when the critical thickness of the GaAs buffer layer is decreased to a value smaller than 3 nm.
Sobre autores
K. Moiseev
Ioffe Institute
Autor responsável pela correspondência
Email: mkd@iropt2.ioffe.ru
Rússia, St. Petersburg, 194021
V. Nevedomsky
Ioffe Institute
Email: mkd@iropt2.ioffe.ru
Rússia, St. Petersburg, 194021
Yu. Kudriavtsev
Dep. Ingenieria Eléctrica-SEES
Email: mkd@iropt2.ioffe.ru
México, México
A. Escobosa-Echavarria
Dep. Ingenieria Eléctrica-SEES
Email: mkd@iropt2.ioffe.ru
México, México
M. Lopez-Lopez
Dep. Fisica
Email: mkd@iropt2.ioffe.ru
México, México