Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers
- Авторы: Sekerbayev K.S.1,2, Taurbayev Y.T.1,2, Efimova A.I.3, Timoshenko V.Y.3,4, Taurbayev T.I.1,2
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Учреждения:
- Scientific-Research Institute of Experimental and Theoretical Physics
- National Nanotechnology Laboratory of Open Type
- Faculty of Physics, Moscow State University
- National Research Nuclear University “MEPhI”
- Выпуск: Том 51, № 8 (2017)
- Страницы: 1047-1051
- Раздел: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/200991
- DOI: https://doi.org/10.1134/S1063782617080279
- ID: 200991
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Аннотация
The infrared optical properties of anisotropic mesoporous silicon films containing free charge carriers (holes) are studied experimentally and theoretically. The results of simulation of the optical properties of the produced samples in the effective-medium approximation show a heavy dependence of the birefringence, reflection anisotropy, and dichroism on the concentration of free charge carriers. The unsteady behavior of the differential transmittance recorded for the samples at mutually perpendicular polarization directions of light are attributed to the effect of charge carriers with a concentration on the order of 1019 cm–3. The results of the study suggest that anisotropic silicon nanostructures are promising materials for infrared photonics and terahertz engineering.
Об авторах
K. Sekerbayev
Scientific-Research Institute of Experimental and Theoretical Physics; National Nanotechnology Laboratory of Open Type
Email: vtimoshe@gmail.com
Казахстан, Almaty, 050040; Almaty, 050040
Ye. Taurbayev
Scientific-Research Institute of Experimental and Theoretical Physics; National Nanotechnology Laboratory of Open Type
Email: vtimoshe@gmail.com
Казахстан, Almaty, 050040; Almaty, 050040
A. Efimova
Faculty of Physics, Moscow State University
Email: vtimoshe@gmail.com
Россия, Moscow, 119991
V. Timoshenko
Faculty of Physics, Moscow State University; National Research Nuclear University “MEPhI”
Автор, ответственный за переписку.
Email: vtimoshe@gmail.com
Россия, Moscow, 119991; Moscow, 115409
T. Taurbayev
Scientific-Research Institute of Experimental and Theoretical Physics; National Nanotechnology Laboratory of Open Type
Email: vtimoshe@gmail.com
Казахстан, Almaty, 050040; Almaty, 050040
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