On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi0.5Sb1.5Te3 solid solution
- Autores: Lukyanova L.1, Boikov Y.1, Usov O.1, Danilov V.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 51, Nº 6 (2017)
- Páginas: 692-694
- Seção: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/199953
- DOI: https://doi.org/10.1134/S1063782617060203
- ID: 199953
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Resumo
It is shown that the Seebeck coefficient α, the power factor α2σ, and the density-of-states effective mass m/m0 in heteroepitaxial films of Bi0.5Sb1.5Te3 solid solution are higher than the corresponding characteristics of bulk thermoelectric materials. The elevated values and weak temperature dependences of these parameters lead to a rise in the parameter proportional to the effective mass, the charge-carrier mobility, and the figure of merit. The character of change in α, α2σ, and m/m0 is determined by the peculiarities of the mechanism of charge-carrier scattering, the anisotropy of the constant-energy surface, and the possible influence of topological surface states of Dirac fermions in the films.
Sobre autores
L. Lukyanova
Ioffe Institute
Autor responsável pela correspondência
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
Yu. Boikov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
O. Usov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Danilov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Rússia, St. Petersburg, 194021