Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells
- Autores: Musalinov S.1, Anzulevich A.1, Bychkov I.1, Gudovskikh A.2, Shvarts M.3
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Afiliações:
- Chelyabinsk State University
- St. Petersburg Academic University
- Ioffe Physical–Technical Institute
- Edição: Volume 51, Nº 1 (2017)
- Páginas: 88-92
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199339
- DOI: https://doi.org/10.1134/S1063782617010146
- ID: 199339
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Resumo
The results of simulation by the transfer-matrix method of TiO2/SiO2 double-layer and TiO2/Si3N4/SiO2 triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO2/SiO2 double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m2) and for the case of zero reflection loss. It is shown in the simulation that the optimized TiO2/Si3N4/SiO2 triple-layer antireflection coating provides a 2.3 mA/cm2 gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO2/SiO2 double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.
Sobre autores
S. Musalinov
Chelyabinsk State University
Email: shvarts@scell.ioffe.ru
Rússia, Chelyabinsk, 454021
A. Anzulevich
Chelyabinsk State University
Email: shvarts@scell.ioffe.ru
Rússia, Chelyabinsk, 454021
I. Bychkov
Chelyabinsk State University
Email: shvarts@scell.ioffe.ru
Rússia, Chelyabinsk, 454021
A. Gudovskikh
St. Petersburg Academic University
Email: shvarts@scell.ioffe.ru
Rússia, St. Petersburg, 194021
M. Shvarts
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: shvarts@scell.ioffe.ru
Rússia, St. Petersburg, 194021