Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
- Autores: Zubov F.1,2, Kryzhanovskaya N.1,2, Moiseev E.1, Polubavkina Y.1, Simchuk O.1, Kulagina M.3, Zadiranov Y.3, Troshkov S.3, Lipovskii A.1,2, Maximov M.1,2,3, Zhukov A.1,2
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Afiliações:
- Saint Petersburg National Research Academic University
- Peter the Great Saint-Petersburg Polytechnic University
- Ioffe Physical–Technical Institute
- Edição: Volume 50, Nº 10 (2016)
- Páginas: 1408-1411
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198182
- DOI: https://doi.org/10.1134/S1063782616100250
- ID: 198182
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Resumo
The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm2, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 μm. The total power emitted into free space reaches ~0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is ~2.8%.
Sobre autores
F. Zubov
Saint Petersburg National Research Academic University; Peter the Great Saint-Petersburg Polytechnic University
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251
N. Kryzhanovskaya
Saint Petersburg National Research Academic University; Peter the Great Saint-Petersburg Polytechnic University
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251
E. Moiseev
Saint Petersburg National Research Academic University
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021
Yu. Polubavkina
Saint Petersburg National Research Academic University
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021
O. Simchuk
Saint Petersburg National Research Academic University
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021
M. Kulagina
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. Zadiranov
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Troshkov
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Lipovskii
Saint Petersburg National Research Academic University; Peter the Great Saint-Petersburg Polytechnic University
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251
M. Maximov
Saint Petersburg National Research Academic University; Peter the Great Saint-Petersburg Polytechnic University; Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Zhukov
Saint Petersburg National Research Academic University; Peter the Great Saint-Petersburg Polytechnic University
Autor responsável pela correspondência
Email: zhukale@gmail.com
Rússia, ul. Khlopina 8/3, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251