Radiation-induced bistable centers with deep levels in silicon n+–p structures
- Autores: Lastovskii S.1, Markevich V.2, Yakushevich H.1, Murin L.1, Krylov V.3
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Afiliações:
- Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
- Photon Science Institute
- Vladimir State University
- Edição: Volume 50, Nº 6 (2016)
- Páginas: 751-755
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197222
- DOI: https://doi.org/10.1134/S1063782616060130
- ID: 197222
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Resumo
The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at EV + 0.45 and EV + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 1015 s–1. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.
Sobre autores
S. Lastovskii
Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Autor responsável pela correspondência
Email: lastov@ifttp.bas-net.by
Belarus, Minsk, 220072
V. Markevich
Photon Science Institute
Email: lastov@ifttp.bas-net.by
Reino Unido da Grã-Bretanha e Irlanda do Norte, Manchester, M13 9PL
H. Yakushevich
Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Email: lastov@ifttp.bas-net.by
Belarus, Minsk, 220072
L. Murin
Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Email: lastov@ifttp.bas-net.by
Belarus, Minsk, 220072
V. Krylov
Vladimir State University
Email: lastov@ifttp.bas-net.by
Rússia, Vladimir, 600000