Enviar artigo por via de e-mail Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation
- Autores: Popov V.1
-
Afiliações:
- National Nuclear Research University MEPhI
- Edição: Volume 50, Nº 3 (2016)
- Páginas: 349-351
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196891
- DOI: https://doi.org/10.1134/S1063782616030209
- ID: 196891
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The results of an experimental study of how surface defects are formed at the Si–SiO2 interface at γ-radiation dose rates of P = 0.1 and 1.0 rad/s are reported. It is found that the surface defects are formed in two stages. The defect-formation mechanisms are analyzed.
Palavras-chave
Sobre autores
V. Popov
National Nuclear Research University MEPhI
Autor responsável pela correspondência
Email: wdpopov@mail.ru
Rússia, Moscow, 115409
