Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
- Autores: Korolev D.1, Mikhaylov A.1, Belov A.1, Vasiliev V.1, Guseinov D.1, Okulich E.1, Shemukhin A.2, Surodin S.1, Nikolitchev D.1, Nezhdanov A.1, Pirogov A.1, Pavlov D.1, Tetelbaum D.1
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Afiliações:
- Nizhny Novgorod State University
- Skobeltsyn Institute of Nuclear Physics
- Edição: Volume 50, Nº 2 (2016)
- Páginas: 271-275
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/196839
- DOI: https://doi.org/10.1134/S1063782616020135
- ID: 196839
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Resumo
The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.
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Sobre autores
D. Korolev
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Mikhaylov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Belov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
V. Vasiliev
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
D. Guseinov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
E. Okulich
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Shemukhin
Skobeltsyn Institute of Nuclear Physics
Email: tetelbaum@phys.unn.ru
Rússia, Moscow, 119991
S. Surodin
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
D. Nikolitchev
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Nezhdanov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Pirogov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
D. Pavlov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950
D. Tetelbaum
Nizhny Novgorod State University
Autor responsável pela correspondência
Email: tetelbaum@phys.unn.ru
Rússia, Nizhny Novgorod, 603950