Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
- Authors: Korolev D.S.1, Mikhaylov A.N.1, Belov A.I.1, Vasiliev V.K.1, Guseinov D.V.1, Okulich E.V.1, Shemukhin A.A.2, Surodin S.I.1, Nikolitchev D.E.1, Nezhdanov A.V.1, Pirogov A.V.1, Pavlov D.A.1, Tetelbaum D.I.1
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Affiliations:
- Nizhny Novgorod State University
- Skobeltsyn Institute of Nuclear Physics
- Issue: Vol 50, No 2 (2016)
- Pages: 271-275
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/196839
- DOI: https://doi.org/10.1134/S1063782616020135
- ID: 196839
Cite item
Abstract
The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.
About the authors
D. S. Korolev
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. N. Mikhaylov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. I. Belov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. K. Vasiliev
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
D. V. Guseinov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
E. V. Okulich
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. A. Shemukhin
Skobeltsyn Institute of Nuclear Physics
Email: tetelbaum@phys.unn.ru
Russian Federation, Moscow, 119991
S. I. Surodin
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
D. E. Nikolitchev
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Nezhdanov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Pirogov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
D. A. Pavlov
Nizhny Novgorod State University
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950
D. I. Tetelbaum
Nizhny Novgorod State University
Author for correspondence.
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950