Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer
- Autores: Rykov A.1, Dorokhin M.1, Malysheva E.1, Demina P.1, Vikhrova O.1, Zdoroveishev A.1
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Afiliações:
- Research Physical–Technical Institute
- Edição: Volume 50, Nº 1 (2016)
- Páginas: 1-7
- Seção: XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015
- URL: https://journals.rcsi.science/1063-7826/article/view/196674
- DOI: https://doi.org/10.1134/S106378261601019X
- ID: 196674
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Resumo
The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained. A steady increase in the degree of electroluminescence circular polarization and in the Curie temperature of the ferromagnetic structure with increasing hole concentration is observed, and a change in sign of the degree of circular polarization under variations in the Mn content is revealed. The data are interpreted on the basis of well-known models of ferromagnetism in structures based on ferromagnetic semiconductors.
Sobre autores
A. Rykov
Research Physical–Technical Institute
Autor responsável pela correspondência
Email: rikov@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
M. Dorokhin
Research Physical–Technical Institute
Email: rikov@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
E. Malysheva
Research Physical–Technical Institute
Email: rikov@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
P. Demina
Research Physical–Technical Institute
Email: rikov@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
O. Vikhrova
Research Physical–Technical Institute
Email: rikov@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950
A. Zdoroveishev
Research Physical–Technical Institute
Email: rikov@nifti.unn.ru
Rússia, Nizhny Novgorod, 603950