Автор туралы ақпарат
Tyaginov, S. E.
Шығарылым | Бөлім | Атауы | Файл |
Том 52, № 2 (2018) | Physics of Semiconductor Devices | Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures | |
Том 52, № 10 (2018) | Physics of Semiconductor Devices | Analysis of the Features of Hot-Carrier Degradation in FinFETs | |
Том 52, № 13 (2018) | Physics of Semiconductor Devices | Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |