Автор туралы ақпарат
Sheremet, I.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 10 (2016) | Physics of Semiconductor Devices | Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen | |
Том 51, № 1 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire | |
Том 51, № 9 (2017) | Physics of Semiconductor Devices | Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |