Автор туралы ақпарат
Reunov, D. G.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 52, № 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates | |
| Том 53, № 3 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons | |
| Том 53, № 8 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |