Автор туралы ақпарат
Shklyaev, A. A.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 51, № 10 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |