Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures
- Авторлар: Kozlov D.1,2, Rumyantsev V.1,2, Morozov S.1,2
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Мекемелер:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 53, № 9 (2019)
- Беттер: 1198-1202
- Бөлім: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206772
- DOI: https://doi.org/10.1134/S1063782619090100
- ID: 206772
Дәйексөз келтіру
Аннотация
The states of double acceptors in HgTe/СdHgTe heterostructures containing quantum wells are theoretically investigated taking into account the substantial difference in the values of the permittivities of the barrier and quantum-well layers. The effect of such a difference and the charge induced at the heterointerfaces arising from it are described with the image-charge potential. Calculation shows a significant change in the binding energy of the acceptor centers—mercury vacancies due to the induced charge; the ionization energies of mercury vacancies are in good agreement with the position of the spectral features in the photoluminescence spectrum of the HgTe/CdHgTe heterostructures containing quantum wells.
Негізгі сөздер
Авторлар туралы
D. Kozlov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: dvkoz@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Morozov
Institute for Physics of Microstructures, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Email: dvkoz@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950