The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy
- Авторлар: Emelyanov E.1, Vasev A.1, Semyagin B.1, Yesin M.1, Loshkarev I.1, Vasilenko A.1, Putyato M.1, Petrushkov M.1, Preobrazhenskii V.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Шығарылым: Том 53, № 4 (2019)
- Беттер: 503-510
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205976
- DOI: https://doi.org/10.1134/S1063782619040092
- ID: 205976
Дәйексөз келтіру
Аннотация
The effect of a substrate misorientation degree from a singular face on the composition and morphology of layers of InAsxSb1 –x solid solutions obtained by molecular-beam epitaxy on a GaAs surface has been investigated. The substrates of GaAs wafers with the orientation (100) misoriented in the direction [110] by 0°, 1°, 2°, and 5° are used. The heterostructures are grown at temperatures of 310°C and 380°C (respectively, the lower and upper boundaries of the temperature range in which structurally perfect InAsxSb1 –x films form). The effect of the molecular form of arsenic (As2 or As4) on the composition of the layers is studied. The composition and structural properties are investigated using high-resolution X-ray diffractometry (HRXRD) and atomic-force microscopy (AFM). It is established that, in the series of misorientation angles 0° → 5°, the arsenic fraction x increases consecutively when using fluxes of both As2 and As4 molecules. With the As2 molecular flux, the fraction x increases only a little (1.05 times) with increasing degree of misorientation, while, when using the As4 flux, the increase in x is 1.75 times. An increase in the growth temperature leads to growth in the arsenic fraction in the solid solution. The surface morphology improves with an increasing degree of misorientation at a low growth temperature and degrades at a high temperature.
Авторлар туралы
E. Emelyanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Vasev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Yesin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
I. Loshkarev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Vasilenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Petrushkov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, Novosibirsk, 630090