Formation of Nanoporous Copper-Silicide Films
- Авторлар: Buchin E.1, Naumov V.1, Vasilyev S.1
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Мекемелер:
- Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
- Шығарылым: Том 53, № 3 (2019)
- Беттер: 395-399
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205890
- DOI: https://doi.org/10.1134/S1063782619030059
- ID: 205890
Дәйексөз келтіру
Аннотация
The possibility of forming nanoporous copper-silicide films with different phase compositions is experimentally demonstrated. For this purpose, the parameters of the initial a-Si/Cu structure and the conditions of its annealing are chosen so that the process of solid-phase synthesis comes to a halt at the stage of formation of a branched silicide cluster. Then the films are subjected to liquid etching in a mixture of diluted inorganic acids. In this case, the metastable CuxSi phase with a low Cu content is selectively removed, and a three-dimensional silicide cluster is released. At the same time, surface Kirkendall voids present in the films open. As a result of these two processes in combination, a nanoporous structure is formed.
Авторлар туралы
E. Buchin
Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: imi.buchin@rambler.ru
Ресей, Yaroslavl, 150007
V. Naumov
Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
Email: imi.buchin@rambler.ru
Ресей, Yaroslavl, 150007
S. Vasilyev
Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
Email: imi.buchin@rambler.ru
Ресей, Yaroslavl, 150007