Мақаланы E-mail арқылы жіберу Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures
- Авторлар: Kabalnov Y.1, Trufanov A.1, Obolensky S.2
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Мекемелер:
- Sedakov Scientific Research Institute of Measurement Systems
- Lobachevsky University of Nizhny Novgorod
- Шығарылым: Том 53, № 3 (2019)
- Беттер: 368-374
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205867
- DOI: https://doi.org/10.1134/S1063782619030084
- ID: 205867
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Аннотация
The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.
Авторлар туралы
Yu. Kabalnov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
A. Trufanov
Sedakov Scientific Research Institute of Measurement Systems
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
S. Obolensky
Lobachevsky University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
