Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates
- Авторлар: Avakyants L.1, Bokov P.1, Kazakov I.2, Bazalevsky M.2, Deev P.1, Chervyakov A.1
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Мекемелер:
- Faculty of Physics
- Lebedev Physical Institute
- Шығарылым: Том 52, № 7 (2018)
- Беттер: 849-852
- Бөлім: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/203616
- DOI: https://doi.org/10.1134/S1063782618070023
- ID: 203616
Дәйексөз келтіру
Аннотация
The mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition (Eg) and the transition between the conduction band and spin-orbit-split valence subband (Eg + ΔSO) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz–Keldysh oscillations).
Авторлар туралы
L. Avakyants
Faculty of Physics
Email: pavel_bokov@physics.msu.ru
Ресей, Moscow, 119991
P. Bokov
Faculty of Physics
Хат алмасуға жауапты Автор.
Email: pavel_bokov@physics.msu.ru
Ресей, Moscow, 119991
I. Kazakov
Lebedev Physical Institute
Email: pavel_bokov@physics.msu.ru
Ресей, Moscow, 119991
M. Bazalevsky
Lebedev Physical Institute
Email: pavel_bokov@physics.msu.ru
Ресей, Moscow, 119991
P. Deev
Faculty of Physics
Email: pavel_bokov@physics.msu.ru
Ресей, Moscow, 119991
A. Chervyakov
Faculty of Physics
Email: pavel_bokov@physics.msu.ru
Ресей, Moscow, 119991