Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

A. M. Mozharov; A. A. Vasiliev; A. D. Bolshakov; G. A. Sapunov; V. V. Fedorov; G. E. Cirlin; I. S. Mukhin

doi:10.1134/S1063782618040231

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

Авторлар: Mozharov A.¹, Vasiliev A.¹, Bolshakov A.¹, Sapunov G.¹, Fedorov V.¹, Cirlin G.¹^,2^,3, Mukhin I.¹^,2
Мекемелер:
1. St. Petersburg Academic University
2. ITMO University
3. Institute for Analytical Instrumentation
Шығарылым: Том 52, № 4 (2018)
Беттер: 489-492
Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures
URL: https://journals.rcsi.science/1063-7826/article/view/202837
DOI: https://doi.org/10.1134/S1063782618040231
ID: 202837

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Аннотация

In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.