Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures
- Авторлар: Kažukauskas V.1, Garbačauskas R.1, Savicki S.1
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Мекемелер:
- Vilnius University
- Шығарылым: Том 52, № 2 (2018)
- Беттер: 160-164
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202377
- DOI: https://doi.org/10.1134/S1063782618020057
- ID: 202377
Дәйексөз келтіру
Аннотация
TlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.
Авторлар туралы
V. Kažukauskas
Vilnius University
Хат алмасуға жауапты Автор.
Email: vaidotas.kazukauskas@ff.vu.lt
Литва, Vilnius, LT-10257
R. Garbačauskas
Vilnius University
Email: vaidotas.kazukauskas@ff.vu.lt
Литва, Vilnius, LT-10257
S. Savicki
Vilnius University
Email: vaidotas.kazukauskas@ff.vu.lt
Литва, Vilnius, LT-10257