Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions
- Авторлар: Askerov S.1, Abdullayeva L.1, Hasanov M.1
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Мекемелер:
- Institute for Physical Problems
- Шығарылым: Том 51, № 5 (2017)
- Беттер: 591-593
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199854
- DOI: https://doi.org/10.1134/S1063782617050049
- ID: 199854
Дәйексөз келтіру
Аннотация
A possible explanation is suggested for discrepancies between experimental values obtained by different authors for the barrier height at the same metal–semiconductor junction. It is supposed that the problem is caused primarily by the structural inhomogeneity of the metal. As a result, the junction behaves as an assembly of a large number of subjunctions connected in parallel. To determine the effect of metal inhomogeneity on the properties of a junction, the dependence of the barrier height in a Schottky diode on the junction area is investigated under the assumption that, with an increase in the area of a junction between a singlecrystal semiconductor and a polycrystalline metal, the degree of inhomogeneity and, thus, the number of subjunctions, increases.
Авторлар туралы
Sh. Askerov
Institute for Physical Problems
Хат алмасуға жауапты Автор.
Email: ashahlar@hotmail.com
Әзірбайжан, Baku, AZ-1148
L. Abdullayeva
Institute for Physical Problems
Email: ashahlar@hotmail.com
Әзірбайжан, Baku, AZ-1148
M. Hasanov
Institute for Physical Problems
Email: ashahlar@hotmail.com
Әзірбайжан, Baku, AZ-1148