Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
- Авторлар: Sitnikov S.1, Kosolobov S.1,2, Latyshev A.1,3
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Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch
- Skolkovo Institute of Science and Technology
- Novosibirsk State University
- Шығарылым: Том 51, № 2 (2017)
- Беттер: 203-206
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199460
- DOI: https://doi.org/10.1134/S106378261702021X
- ID: 199460
Дәйексөз келтіру
Аннотация
The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.
Авторлар туралы
S. Sitnikov
Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: sitnikov@isp.nsc.ru
Ресей, Novosibirsk, 630090
S. Kosolobov
Institute of Semiconductor Physics, Siberian Branch; Skolkovo Institute of Science and Technology
Email: sitnikov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Moscow, 143026
A. Latyshev
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: sitnikov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090